Thought for the month
“There is nothing noble in being superior to some other man. The true nobility is in being superior to your previous self.” Probably W.L. Sheldon, US lecturer on ethics (1858 – 1907) rather than Ernest Hemingway.
Monday, 28 November 2011
Belgium based research consortium Imec has developed a heterojunction bipolar transistor device with peak f(max) values above 450GHz as a key enabler for millimetre-wave low-power circuits to be used in automotive radar applications. Imec used a silicon-germanium: carbon heterojunction bipolar transistor process technology which improves device performance by adding small amounts of germanium and carbon to the silicon transistor base. Compared to III-V HBT devices, SiGe:C HBTs combine high-density and low-cost integration, making them more suitable for consumer applications.