Thought for the month

“The great tragedy of science - the slaying of a beautiful hypothesis by an ugly fact.”
Thomas Huxley, Scientist (1825-95).

Monday, 28 November 2011

imec HBT

Belgium based research consortium Imec has developed a heterojunction bipolar transistor device with peak f(max) values above 450GHz as a key enabler for millimetre-wave low-power circuits to be used in automotive radar applications. Imec used a silicon-germanium: carbon heterojunction bipolar transistor process technology which improves device performance by adding small amounts of germanium and carbon to the silicon transistor base. Compared to III-V HBT devices, SiGe:C HBTs combine high-density and low-cost integration, making them more suitable for consumer applications.

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