Thought for the month
“You cannot have freedom without a rule of law ... and if you don't have it, what you tend to get is corruption and that is death to freedom, it's death to truth, it's death to honour, it's death to democracy.”
Margaret Thatcher, 1 October 1996.
Monday, 28 November 2011
Belgium based research consortium Imec has developed a heterojunction bipolar transistor device with peak f(max) values above 450GHz as a key enabler for millimetre-wave low-power circuits to be used in automotive radar applications. Imec used a silicon-germanium: carbon heterojunction bipolar transistor process technology which improves device performance by adding small amounts of germanium and carbon to the silicon transistor base. Compared to III-V HBT devices, SiGe:C HBTs combine high-density and low-cost integration, making them more suitable for consumer applications.