UK based
Plessey Semiconductors Ltd have acquired Cam GaN Ltd a University of Cambridge
spin-off formed in 2010 to commercialize proprietary technology for growing gallium nitride based high-brightness LEDs on large-area silicon substrates. Plessey will integrate its silicon processing knowledge with CamGaN’s proprietary GaN-on-Si technology to fabricate low cost, high quality HB-LEDs on standard, readily available 6-inch silicon substrates.
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