Thought for the month
“It is a general popular error to suppose the loudest complainers for the public to be the most anxious for its welfare.” Edmund Burke, politician (1729 – 97).
Friday, 16 April 2010
With ever shrinking dimensions within ICs, the role of metrology in maintaining high yield is critical. Researchers are challenged to get accurate measurements of sub-40nm dense trenches and contact holes coming from 193-immersion lithography or e-beam lithography. CEA-Leti's (www.leti.fr) Hybrid Metrology Project has shown noteworthy results in reducing measurement uncertainty at sub-28nm nodes using an alternative 3D-AFM (atomic force microscope) mode for critical measurements (nanotechwire.com/news.asp?nid=9645). The team aims to help equipment makers develop a critical dimension metrology production tool dedicated to hybrid metrology that will reduce R&D cycle time and improve production yield for manufacturers.