Thought for the month

“It is easier to criticise than to correct our past errors.”
Titus Livius, Historian (c64 BC- c12 AD)

Friday, 16 April 2010

Critical dimensions

With ever shrinking dimensions within ICs, the role of metrology in maintaining high yield is critical. Researchers are challenged to get accurate measurements of sub-40nm dense trenches and contact holes coming from 193-immersion lithography or e-beam lithography. CEA-Leti's (www.leti.fr) Hybrid Metrology Project has shown noteworthy results in reducing measurement uncertainty at sub-28nm nodes using an alternative 3D-AFM (atomic force microscope) mode for critical measurements (nanotechwire.com/news.asp?nid=9645). The team aims to help equipment makers develop a critical dimension metrology production tool dedicated to hybrid metrology that will reduce R&D cycle time and improve production yield for manufacturers.

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