Following my retirement, we have closed our company for new business.

Please do not hesitate to contact me directly, our email portal remeains open and I would be delighted to hear from you and provide ongoing support or advice.

Richard Thomson

support@rta-instruments.com

Companies represented up to the end of December 2023. Please now contact them directly.

k-Space Associates, Inc.
Phone: +1 (734) 426-7977
requestinfo@k-space.com
https://www.k-space.com

STAIB INSTRUMENTS GmbH
Phone: +49 8761 76 24 0
sales@staibinstruments.com
https://www.staibinstruments.com/

Thursday 10 February 2011

Avoiding defects

Recent work from North Carolina State University describes a technique for reducing defects in gallium nitride (GaN) epitaxial films grown on sapphire substrates (‘Embedded voids approach for low defect density in epitaxial GaN films’, Appl. Phys. Lett. 98, 023115 (2011), 17 January and this link). By embedding a series of high density micro-voids within thin films, the group were able to create sinks or termination sites for dislocations. According to the team, TEM and AFM analysis confirm dislocation density reductions of 2-3 orders of magnitude with particular benefits for LEDs emitting in the ultraviolet range.

No comments:

Post a Comment