Flexible FET

All plastic electronics? Not quite, but a recent report from Georgia Tech is interesting. The research team used an existing device and changed the gate dielectric to a bilayer gate dielectric. The bilayer dielectric is made of a fluorinated polymer known as CYTOP and a high-k metal oxide layer. Used alone, each has its benefits and its drawbacks. CYTOP is known to form few defects at the interface but has a very low dielectric constant, which requires an increase in drive voltage. The high-k metal oxide uses low voltage, but doesn’t have good stability because of a high number of defects on the interface. However the combination worked well and the only time they saw any degradation was when they dropped it into acetone for an hour. There was some degradation, but the transistor was still operational!